PD-SOI MOSFET body-to-body leakage scaling trend and optimization

H.C. Lo; W.C. Luo; W.Y. Lu; C.F. Cheng; Benny Wu; T.L. Chen; C.H. Lien; Samuel K. H. Fung; H.C. Tuan

doi:10.1109/SOI.2008.4656288

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Conference paper

PD-SOI MOSFET body-to-body leakage scaling trend and optimization

H.C. Lo, W.C. Luo, W.Y. Lu, C.F. Cheng, Benny Wu, T.L. Chen, C.H. Lien, Samuel K. H. Fung and H.C. Tuan

Proceedings - IEEE International SOI Conference, pp.49-50

2008

DOI: https://doi.org/10.1109/SOI.2008.4656288

Abstract

Body-to-Body leakage (BBL) in stacked transistor configuration has been characterized by different back gate biases (Vbg), SOI thicknesses, and poly spacings. BBL increases significantly from 65nm to 45nm node mainly due to smaller poly spacing and shallower S/D junctions. By implant optimization and reduction of the SOI thickness, BBL can be reduced below reverse junction leakage level. ©2008 IEEE.

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Title: PD-SOI MOSFET body-to-body leakage scaling trend and optimization
Creators - without role: H.C. Lo - Taiwan Semiconductor Manufacturing Company (Taiwan)
W.C. Luo - National Yang Ming Chiao Tung University
W.Y. Lu - Taiwan Semiconductor Manufacturing Company (Taiwan)
C.F. Cheng - R and D, Taiwan Semiconductor Manufacturing Company Ltd. , Hsinchu Science Park
Benny Wu - Taiwan Semiconductor Manufacturing Company (Taiwan)
T.L. Chen - Taiwan Semiconductor Manufacturing Company (Taiwan)
C.H. Lien - National Tsing Hua University
Samuel K. H. Fung - R and D, Taiwan Semiconductor Manufacturing Company Ltd. , Hsinchu Science Park
H.C. Tuan - Taiwan Semiconductor Manufacturing Company (Taiwan)
Grant note: IEEE Electron Devices Society
Identifiers: 9781424419548; 9957776806306774
Academic Unit: College of Electrical Engineering and Computer Science, National Tsing Hua University
Language: English
Resource Type: Conference paper
Publication Details: Proceedings - IEEE International SOI Conference, pp.49-50

PD-SOI MOSFET body-to-body leakage scaling trend and optimization

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