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Parallelizing SRAM arrays with customized bit-cell for binary neural networks
Conference paper

Parallelizing SRAM arrays with customized bit-cell for binary neural networks

Rui Liu, Xiaochen Peng, Xiaoyu Sun, Win-San Khwa, Xin Si, Jia-Jing Chen, Jia-Fang Li, Meng-Fan Chang and Shimeng Yu
Proceedings - Design Automation Conference, Vol.Part F137710, a21
06/2018

Abstract

Computer Science Applications Control and Systems Engineering Electrical and Electronic Engineering Modeling and Simulation
Recent advances in deep neural networks (DNNs) have shown Binary Neural Networks (BNNs) are able to provide a reasonable accuracy on various image datasets with a significant reduction in computation and memory cost. In this paper, we explore two BNNs: Hybrid BNN (HBNN) and XNORBNN, where the weights are binarized to +1/-1 while the neuron activations are binarized to 1/0 and +1/-1, respectively. Two SRAM bit cell designs are proposed, namely, 6T SRAM for HBNN and customized 8T SRAM for XNOR-BNN. In our design, the high-precision multiply-and-accumulate (MAC) is replaced by bitwise multiplication for HBNN or XNOR for XNOR-BNN plus bit-counting operations. To parallelize the weighted sum operation, we activate multiple word lines in the SRAM array simultaneously and digitize the analog voltage developed along the bit line by a multi-level sense amplifier (MLSA). In order to partition the large matrices in DNNs, we investigate the impact of sensing bit-levels of MLSA on the accuracy degradation for different sub-array sizes and propose using the nonlinear quantization technique to mitigate the accuracy degradation. With 64×64 sub-array size and 3-bit MLSA, HBNN and XNORBNN architectures can minimize the accuracy degradation to 2.37% and 0.88%, respectively, for an inspired VGG-16 network on the CIFAR-10 dataset. Design space exploration of SRAM based synaptic architectures with the conventional row-by-row access scheme and our proposed parallel access scheme are also performed, showing significant benefits in the area, latency and energy-efficiency. Finally, we have successfully taped-out and validated the proposed HBNN and XNOR-BNN designs in TSMC 65 nm process with measured silicon data, achieving energyefficiency >100 TOPS/W for HBNN and >50 TOPS/W for XNOR-BNN.

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