Performance and Reliability Investigation of Ge-Based PMOSFETs by Utilizing Integrated Strained Effects of GeSn Alloy and CESL

Conference paper

C. C. Lee and S. W. Cheng

2014 International Electron Devices and Materials Symposium (IEDMS) 2014 International Electron Devices and Materials Symposium (IEDMS)

2014

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Title: Performance and Reliability Investigation of Ge-Based PMOSFETs by Utilizing Integrated Strained Effects of GeSn Alloy and CESL
Creators - without role: C. C. Lee - 國立清華大學工學院動力機械工程學系
S. W. Cheng
Publication Details: 2014 International Electron Devices and Materials Symposium (IEDMS) 2014 International Electron Devices and Materials Symposium (IEDMS)
Identifiers: 9957772553906774
Academic Unit: Department of Power Mechanical Engineering, College of Engineering, National Tsing Hua University
Language: Traditional Chinese
Resource Type: Conference paper