Abstract
Cadmium-free Cu(In, Ga)Se 2 (CIGS) solar cells have been fabricated with ZnS buffer layers by using a chemical bath deposition (CBD). Significant improvement of current-voltage (J-V) performance was observed in the device after light soaking and rapid thermal annealing (RTA). The improvement by light soaking is a temporary phenomenon. On the contrary, RTA treatment is permanent improvement, which increases V OC and FF, moreover, accelerates the increasing rate of efficiency caused by light soaking, which results in a shorten time to achieve high performance. © 2011 IEEE.