Performance limiting factors as RF MOSFETs scaling down

Y.H. Wu; Albert Chin; C.S. Liang; C.C. Wu

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Conference paper

Performance limiting factors as RF MOSFETs scaling down

Y.H. Wu, Albert Chin, C.S. Liang and C.C. Wu

Digest of papers - IEEE Radio Frequency Integrated Circuits Symposium, pp.151-154

2000

Abstract

Engineering (all)

The measured RF performance of 0.5, 0.25, and 0.18 μm MOSFETs gradually saturates as scaling down, which can be explained by the derived analytical equation and simulation. The overlap C _gd and non-quasi-static effect are the main factors but scales much slower than L _g .

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Title: Performance limiting factors as RF MOSFETs scaling down
Translated title: Performance limiting factors as RF MOSFETs scaling down
Creators - without role: Y.H. Wu - Natl Chiao Tung Univ
Albert Chin - Natl Chiao Tung Univ
C.S. Liang - Natl Chiao Tung Univ
C.C. Wu - Natl Chiao Tung Univ
Identifiers: 9957773498506774
Academic Unit: Tsing Hua College, National Tsing Hua University
Language: English
Resource Type: Conference paper
Publication Details: Digest of papers - IEEE Radio Frequency Integrated Circuits Symposium, pp.151-154

Performance limiting factors as RF MOSFETs scaling down

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