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Periodic Cavities on the IR-Absorber for Responsivity Enhancement of CMOS-MEMS Thermoelectric IR Sensor
Conference paper

Periodic Cavities on the IR-Absorber for Responsivity Enhancement of CMOS-MEMS Thermoelectric IR Sensor

Yung-Chen Li, Tien Chou, Pen-Sheng Lin, Yu -Cheng Huang, Fuchi Shih, You -An Lin, Da-Jen Yen, Mei-Feng Lai and Weileun Fang
Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS), Vol.2023-January, pp.1143-1146
2023
DOI: https://doi.org/10.1109/MEMS49605.2023.10052530
Appears in  keyword about Physics

Abstract

CMOS-MEMS IR-absorber periodic cavities responsivity thermoelectric infrared sensor Electronic Optical and Magnetic Materials Condensed Matter Physics Mechanical Engineering Electrical and Electronic Engineering
This study proposes a periodic cavities structure on the absorber of a CMOS-MEMS thermoelectric (TE) infrared (IR) sensor implemented through TSMC 0.18 μm 1P6M standard CMOS platform for absorption enhancement. Design proposed in this study features: (1) utilizing periodic cavities on the absorber to enhance IR absorption, (2) increasing cavity density to further improve IR absorption, (3) leveraging the advantages of CMOS platform to realize this sub-wavelength optical structure. The TE IR sensor in this study is aimed to be applied in human body temperature detections with a spectral sensing range from 8-14 μm wavelength. Absorption spectrum measurements show the enhancement within target band. Responsivity measurements also reveal cavity structures on the absorber can enhance the performance by 10.8%.

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