Abstract
We propose a useful methodology, called phase-defocus (P-D) window, to express the mutual dependence of Alt-PSM mask structure and the wafer process window of the pattern-position shift caused by phase error and intensity imbalance. The P-D window was predicted and optimized with a 2-D mask with effective phase and transmission by simulations. We further used rigorous E-M field simulations to correlate the 3-D mask structure to those optimized conditions. Moreover, experiments were performed with four kinds of mask structures and the best Alt-PSM structure was obtained and used to suggest the mask fabrication performance based on P-D window analysis. In order to understand the influence of mask fabrication on patterns with various densities, the common P-D window is proposed. Using the P-D window, the optimized condition was achieved with a maximum process margin for the mask and wafer. In addition, the P-D window is used to quantify the scattering effect coming from the topographical mask and determine the effective 180° for the iso-focal condition.