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Physical and electrical characteristics for Si-doped GeSb 9 phase-change memory
Conference paper

Physical and electrical characteristics for Si-doped GeSb 9 phase-change memory

Yu Hsun Perng, Shu Yu Lin, Wen Yen. Lai and Lih Hsin Chou
2011 11th Annual Non-Volatile Memory Technology Symposium, NVMTS 2011, pp.50-53
2011
DOI: https://doi.org/10.1109/NVMTS.2011.6137081

Abstract

crystallization electrical properties failure analysis Ge-Sb alloy phase change random access memory silicon doping thermal propertied
A phase-change random access memory device, consisting of GeSb 9 based chalcogenide, TiW electrode and SiO 2 dielectric layer, was fabricated in order to investigate the electrical characteristic and failure mechanism. Amorphous Si-doped GeSb 9 with high crystallization temperature (235°C) exhibits extremely good thermal stability. Ten year data retention of 164°C shows the remarkable device reliability. After the continuous voltage sweeping of 1.6 V, an unexpected failure was observed via transmission electron microscopy (TEM) image. The failure mechanism was clarified and Si-doped GeSb 9 based PRAM material is concluded to be potential in virtue of its improved device reliability and thermal stability. © 2011 IEEE.

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