Abstract
In present study, we applied either a tensile or compressive mechanical stress during annealing on SrBi 2 Ta 2 O 9 (SBT) ferroelectric thin films with different thickness to investigate the effects of both thickness and stress on the physical and electric properties. The application of external stress during annealing led to the variety of both microstructures and constituted phases (ratio of perovskite vs, pyrochlore) in the films. These variations of structures became more significant in the relatively thinner films. Since the electrical properties of ferroelectrics were strongly depended on their microstructure, domain structure, and constituted phases, our ferroelectric samples demonstrated the distinct ferroelectric behaviors with the condition of various stressing and thickness.