Plasma induced defects in high-k materials and its application on nonvolatile memory

Conference paper

T. K. Kang, C. W. Liao, W. D. Li, C. F. Lin, C. L. Lin and W. F. Wu

Symposium on Nano Device Technology Symposium on Nano Device Technology

2009

Abstract

Plasma induced defects;high-k materials;nonvolatile memory

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Title: Plasma induced defects in high-k materials and its application on nonvolatile memory
Creators - without role: T. K. Kang
C. W. Liao
W. D. Li
C. F. Lin
C. L. Lin
W. F. Wu - 國立清華大學原子科學院工程與系統科學系
Publication Details: Symposium on Nano Device Technology Symposium on Nano Device Technology
Identifiers: 9957775310606774
Academic Unit: Department of Engineering and System Science, College of Nuclear Science, National Tsing Hua University
Language: Traditional Chinese
Resource Type: Conference paper