Plasmon-induced Charge Transport at Transition Metal Nitride-Semiconductor Interfaces via in Situ Nanoimaging

Min-Wen Yu; Satoshi Ishii; Satish Laxman Shinde; Nicholaus Kevin Tanjaya; Kuo-Ping Chen; Tadaaki Nagao

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Plasmon-induced Charge Transport at Transition Metal Nitride-Semiconductor Interfaces via in Situ Nanoimaging

Min-Wen Yu, Satoshi Ishii, Satish Laxman Shinde, Nicholaus Kevin Tanjaya, Kuo-Ping Chen and Tadaaki Nagao

2021 Conference on Lasers and Electro-Optics, CLEO 2021 - Proceedings

05/2021

Appears in keyword about Physics

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Computer Networks and Communications

Electrical and Electronic Engineering

Electronic

Optical and Magnetic Materials

Instrumentation

Atomic and Molecular Physics

and Optics

Photoexcited Kelvin probe force microscope is used to image hot carriers excited in transition metal nitride-semiconductor heterostructures. Both hot holes are hot electron injections are revealed depending on the carrier types of the semiconductors.

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Title: Plasmon-induced Charge Transport at Transition Metal Nitride-Semiconductor Interfaces via in Situ Nanoimaging
Translated title: Plasmon-induced Charge Transport at Transition Metal Nitride-Semiconductor Interfaces via in Situ Nanoimaging
Creators - without role: Min-Wen Yu - Institute of Lighting and Energy Photonics , College of Photonics , National Chiao Tung University
Satoshi Ishii - International Center for Materials Nanoarchitectonics (MANA) , National Institute for Materials Science (NIMS)
Satish Laxman Shinde - International Center for Materials Nanoarchitectonics (MANA) , National Institute for Materials Science (NIMS)
Nicholaus Kevin Tanjaya - International Center for Materials Nanoarchitectonics (MANA) , National Institute for Materials Science (NIMS)
Kuo-Ping Chen - Institute of Lighting and Energy Photonics , College of Photonics , National Chiao Tung University
Tadaaki Nagao - International Center for Materials Nanoarchitectonics (MANA) , National Institute for Materials Science (NIMS)
Publication Details: 2021 Conference on Lasers and Electro-Optics, CLEO 2021 - Proceedings
Identifiers: 9781943580910; 9957766349106774
Academic Unit: Institute of Photonics Technologies, College of Electrical Engineering and Computer Science, National Tsing Hua University
Language: English
Resource Type: Conference paper

Plasmon-induced Charge Transport at Transition Metal Nitride-Semiconductor Interfaces via in Situ Nanoimaging

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