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Point twin-bit RRAM in 3D interweaved cross-point array by Cu BEOL process
Conference paper

Point twin-bit RRAM in 3D interweaved cross-point array by Cu BEOL process

Yung-Wen Chin, Shu-En Chen, Min-Che Hsieh, Tzong-Sheng Chang, Chrong Jung Lin and Ya-Chin King
Technical Digest - International Electron Devices Meeting, IEDM, Vol.2015-February(February), pp.6.4.1-6.4.4
02/2015
DOI: https://doi.org/10.1109/IEDM.2014.7046996
Appears in  keyword about Physics

Abstract

BEOL RRAM self-rectifying Electrical and Electronic Engineering Condensed Matter Physics Electronic Optical and Magnetic Materials Materials Chemistry
A self-rectifying twin-bit RRAM in a novel 3D interweaved cross-point array has been proposed and demonstrated in 28nm CMOS BEOL process. With TaOx RRAMs on both sides of a single Via, the twin-bit RRAM cell is composed by Cu back-end layers only. Excellent selectivity by its asymmetric IV characteristic enables the twin-bit 1R cells to be efficiently stacked in 3D cross-point arrays.

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