Abstract
In this paper, we designed and simulated a polarization-insensitive InGaAs-based Continues wave THz emitter. In the proposed structure, the metallic meshes geometry is designed to increase optical transmission to the active area near the contact electrodes. The nanometer structured metallic features also enhance the local bias field near contact edges where the most photoexcited carriers are generated, leading to enhanced THz current. The simulation results demonstrate that the optimized structure generates 51 μw THz power under unpolarized 200 mW optical pump power at 500 GHz beat frequency.