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Preparation of PNN-PZT thick film on Pt/Ti/SiO2/Si substrate by laser lift-off process
Conference paper   Peer reviewed

Preparation of PNN-PZT thick film on Pt/Ti/SiO2/Si substrate by laser lift-off process

Kun-Yu Li, Nyan-Hwa Tai and I.-Nan Lin
Integrated Ferroelectrics, Vol.69, pp.135-141
2005

Abstract

Thick PNN-PZT films, about 25 μm, were successfully prepared by combining the screen printing and laser lift-off techniques. PNN-PZT films screen printed on sapphire substrate, after sintering at 1200°C (3 h), are secondary free perovskite, possessing good ferroelectric properties (Pr = 16.4 μC/cm 2 , Ec = 12.6 kV/cm). Silver-bunding und laser lift-off processes can successfully transfer the PNN-PZT films from the sapphire to silicon substrates, maintaining ferroelectric properties. The resulted PNN-PZT/Si thick films possess larger electrical polarisation: (Pr = 16.5 μC/cm 2 ) with slightly larger coercive field (Ec = 24.6 kV/cm).

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