Pressure Sensitive Ionic Gel-FETs Of Extremely High Sensitivity Over 2,200 kPa−1 Operated Under 2V

Shunsuke Yamada; 隆昭 佐藤; Hiroshi Toshiyoshi

doi:10.1109/TRANSDUCERS.2017.7994161

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Conference paper

Pressure Sensitive Ionic Gel-FETs Of Extremely High Sensitivity Over 2,200 kPa−1 Operated Under 2V

Shunsuke Yamada, 隆昭佐藤 and Hiroshi Toshiyoshi

2017 19th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS)

06/2017

DOI: https://doi.org/10.1109/TRANSDUCERS.2017.7994161

Abstract

Ionic liquid;metal oxide semiconductor;tactile sensor;MOSFET

Ionic gel is used for the first time on a ZnO field effect transistor (FET) to enhance the gate capacitance due to the electrical double layer, thereby developing an extremely sensitive tactile pressure sensor of 2,200 kPa−1, which is at least 10 times greater than the conventional reports.

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Title: Pressure Sensitive Ionic Gel-FETs Of Extremely High Sensitivity Over 2,200 kPa−1 Operated Under 2V
Creators - without role: Shunsuke Yamada - The University of Tokyo
隆昭佐藤
Hiroshi Toshiyoshi - The University of Tokyo
Publication Details: 2017 19th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS)
Identifiers: 978-1-53-862733-4; 9957776234006774
Academic Unit: Department of Power Mechanical Engineering, College of Engineering, National Tsing Hua University
Language: English
Resource Type: Conference paper

Pressure Sensitive Ionic Gel-FETs Of Extremely High Sensitivity Over 2,200 kPa−1 Operated Under 2V

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