Abstract
The compound semiconductor channel materials have recently drawn great attention because of their potential to solve the upcoming Si MOSFETs scaling problem and become the next generation high-speed, low-power devices. In this work we review the latest silicon technology and report the process development of submicron III-V MOSFETs. A new approach has been demonstrated to overcome the high interface density of states between gate dielectric and channels by applying an interface-control-layer. The proposed design and results show promise for realizing compound semiconductor based MOSFETs.