Abstract
In 0.52 Al 0.48 As/In 0.39 Ga 0.61 As 0.77 Sb 0.23 /In 0.53 Ga 0.47 As double heterojunction bipolar transistors (DHBTs) were irradiated with 5 MeV protons at fluences from 2× 10 11 to 2× 10 15 protons/cm 2 . The radiation produced significant increases in generation-recombination leakage current in both emitter-base and base-collector junctions. The DHBTs irradiated with a dose of 2× 10 11 cm -2 , which was equivalent to around 40 years of exposure in low Earth orbit, showed minimal changes in the junction ideality factor, generation-recombination leakage current, current gain, and output conductance. The InAlAs/InGaAsSb/InGaAs DHBTs appear to be well suited to space or nuclear industry applications. © 2009 American Vacuum Society.