Punchthrough transient voltage suppressor for EOS/ESD protection of low-voltage IC's

Bin Yu; Ya-Chin King; Jeff Pohlman; Chenming Hu

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Conference paper

Punchthrough transient voltage suppressor for EOS/ESD protection of low-voltage IC's

Bin Yu, Ya-Chin King, Jeff Pohlman and Chenming Hu

Electrical Overstress/Electrostatic Discharge Symposium Proceedings, pp.27-33

1995

Abstract

A silicon transient voltage suppresser (TVS) is presented for off-chip EOS/ESD protection of ICs with supply voltages ranging from 3.3V down to 1.5V. The np ⁺ p ^- n four-layer TVS operates in punchthrough mode instead of the avalanche mode as in conventional TVS diodes. Performance was investigated by device simulator TMA-MEDICI for several device structure options for ultra-low-voltage EOS/ESD protection.

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Title: Punchthrough transient voltage suppressor for EOS/ESD protection of low-voltage IC's
Creators - without role: Bin Yu - University of California, Berkeley
Ya-Chin King - University of California, Berkeley
Jeff Pohlman - University of California, Berkeley
Chenming Hu - University of California, Berkeley
Publication Details: Electrical Overstress/Electrostatic Discharge Symposium Proceedings, pp.27-33
Grant note: IEEE
Identifiers: 9957770825006774
Academic Unit: Institute of Electronics Engineering, College of Electrical Engineering and Computer Science, National Tsing Hua University
Language: English
Resource Type: Conference paper

Punchthrough transient voltage suppressor for EOS/ESD protection of low-voltage IC's

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