Abstract
An embedded Artificial Synaptic Device (eASD) featuring high-performance and high-density characteristics with n-MOSFET's high-k layer as memristive switching pairs in pure 28nm CMOS process is firstly proposed. Taking the advantages of reliable output constructed by complementary memristance states, the novel artificial synaptic device fully compatible to CMOS process is promising to be implemented in the neuromorphic AI computing chip for the coming high-speed neural network system.