Abstract
Currently, Schottky diode embedded SiC MOSFETs is a popular topic because of its remarkable intrinsic diode behavior and bipolar-degradation-free operation. JMOS is one of them that exhibits much higher chip area efficiency, which means there is neither additional process nor more active-area requirement. Meanwhile, SiC is also an excellent material to adapt to many harsh environments. In some applications, such as aerospace, military, and high-energy facilities, radiation hardening is a crucial concern. In this work, an over 1,000krad of Co-60 gamma-ray irradiation experiment has been done. The general comparison between J, no significant difference in radiation hardness is detected between JMOS and DMOS.