Abstract
This study proposes an RC-filtered stress-decoupled (RCSD) 4T2R nonvolatile TCAM (nvTCAM) to 1) suppress match-line (ML) leakage current from match cells (I ML-M ), 2) reduce ML parasitic load (C ML ), 3) decouple NVM-stress from wordlength (WDL) and I ML-MIS . RCSD reduces NVM-stress by 7+x, and achieves a 4+x improvement in speed-WDL-capacity-product. A 128×32b RCSD nvTCAM macro was fabricated using HfO ReRAM and an 180nm CMOS. This paper presents the first ReRAM-based nvTCAM featuring the shortest (1.2ns) search delay (T SD ) among nvTCAMs with WDL≧32b. © 2014 IEEE.