Abstract
Resistive memory device (Memristor) is one of the candidates for energy-efficient nonvolatile memory and nonvolatile logics (nvLogics) in the applications of wearable devices, Internet of Things (IoT), cloud computing, and big-data processing. However, resistive RAM (ReRAM) and memristor-based nvLogics suffer limited performance and low yield due to process variations in transistors and resistance of memristor. This presentation discusses the design challenges in read circuits for high-speed, area-efficient, and low-voltage ReRAM and nvLogics. Memristor-based nvLogics, such as nonvolatile-SRAM (nvSRAM), nonvolatile flip-flops (nvFF), and nonvolatile TCAM (nvTCAM) are included in this presentation. Several silicon-verified solutions on read scheme and sense amplifiers are also discussed in this presentation. © 2015 IEEE.