Refining Accuracy: A Quasi-Floating Channel SPICE Model for Third-Quadrant SiC MOSFET Analysis in Both Planar and Trench Structures

This paper presents an improved SPICE model for SiC MOSFETs. We introduce a model dividing SiC MOSFET operation into a PN diode and a quasi-floating channel (QFC) model, specifically addressing the third quadrant operational mode. This approach significantly reduces root mean square error in  characteristics compared to conventional models, as demonstrated by experimental data from dynamic switching experiments and comparative analysis. The proposed model exhibits a marked improvement in replicating real-world operational dynamics of SiC MOSFETs, especially in dynamic scenarios. With a maximum 95% reduction in RMSE and enhanced computational efficiency, the model is established as a valuable tool for advanced SiC MOSFET simulation and analysis, impacting the efficiency, performance, and reliability of power electronic systems.