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Reflectance of sub-wavelength structure on silicon nitride for solar cell application
Conference paper

Reflectance of sub-wavelength structure on silicon nitride for solar cell application

Kartika Chandra Sahoo, Yiming Li, Edward Yi Chang, Men-Ku Lin and Jin-Hua Huang
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD, 5290233
2009

Abstract

Antireflection coating Efficiency Fabrication and characterization Maxwell equations Modeling and simulation Reflectance Rigorous coupled-wave approach Silicon nitride Sub-wavelength structure Electrical and Electronic Engineering Computer Science Applications Modeling and Simulation
In this study, reflection properties of sub-wavelength structures (SWS) on silicon nitride (Si 3 N 4 ) antireflective coatings are investigated. Numerical calculation of SWS reflection based on a rigorous coupled-wave approach is conducted and compared with the measurement of fabricated samples. We compare the results of single- and double-layer- antireflection (SLAR and DLAR) coatings with SWS on Si 3 N 4 , taking into account average residual reflectivity over a range of wavelengths, where the solar efficiency is further estimated. A low average residual reflectivity of 9.56% could be obtained for a Si 3 N 4 SWS height and non-etched layer of 140 nm and 60 nm respectively, which will be less than 80 nm Si3N4 SLAR (∼15%) and almost the same as that of a DLAR with 60 nm Si 3 N 4 and 70 nm magnesium fluoride (∼10%).

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