Abstract
Transient subpicosecond Raman spectroscopy has been used to measure electron transport properties in an In x Ga 1-x As-based semiconductor nanostructure under the application of an electric field. The deduced electron drift velocity has been found to be significantly larger than either GaAs or InP-based p-i-n nanostructures under similar experimental conditions. We attribute this finding to both the smaller electron effective mass and the larger Γ to L(X) energy separations in In x Ga 1-x As. The experimental results are compared with ensemble Monte Carlo calculations.