Reliability evaluation and comparison of class-E and class-A power amplifiers with 0.18 μm CMOS technology

Wei-Cheng Lin; Long-Jei Du; Ya-Chin King

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Conference paper

Reliability evaluation and comparison of class-E and class-A power amplifiers with 0.18 μm CMOS technology

Wei-Cheng Lin, Long-Jei Du and Ya-Chin King

Annual Proceedings - Reliability Physics (Symposium), pp.415-416

2004

Appears in keyword about Physics

Abstract

Circuit Reliability of Class-E and Class-A power amplifiers are investigated based on a degradation sub-circuit model. In this study, we've found that Class-E amplifier degrades faster than Class-A amplifier, due to the relatively large switch stress voltage between gate to drain. The decrease of power added efficiency lead to the functional failure of a power amplifier.

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Title: Reliability evaluation and comparison of class-E and class-A power amplifiers with 0.18 μm CMOS technology
Creators - without role: Wei-Cheng Lin - Microelectronics Laboratory , Institute of Electronics Engineering , National Tsing-Hua University
Long-Jei Du - Microelectronics Laboratory , Institute of Electronics Engineering , National Tsing-Hua University
Ya-Chin King - Microelectronics Laboratory , Institute of Electronics Engineering , National Tsing-Hua University
Publication Details: Annual Proceedings - Reliability Physics (Symposium), pp.415-416
Grant note: IEEE Electron Devices Society;IEEE Reliability Soc
Identifiers: 9957772626206774
Academic Unit: Institute of Electronics Engineering, College of Electrical Engineering and Computer Science, National Tsing Hua University
Language: English
Resource Type: Conference paper

Reliability evaluation and comparison of class-E and class-A power amplifiers with 0.18 μm CMOS technology

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