Abstract
A device degradation model reported in our previous work is used for circuit-level reliability evaluation. The sub-circuit model can successfully describe both the DC and AC device degradation characteristics under hot-carrier stress. An analysis on Low Noise Amplifier (LNA) vulnerable to hot carrier is discussed and evaluated. The circuit performance degradation predicted by this sub-circuit model shows fairly good agreement with measurement results. © 2004 Elsevier Ltd. All rights reserved.