Reproducible resistance switching behavior in Pt/Ta2O5/TiN structure for nonvolatile memory devices

Conference paper

J. Y. Lin, J. H. Chen, T. C. Chang and W. F. Wu

Symposium on Nano Device Technology Symposium on Nano Device Technology

2010

Abstract

Reproducible resistance switching behavior;Pt/Ta2O5/TiN structure;nonvolatile memory devices

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Title: Reproducible resistance switching behavior in Pt/Ta2O5/TiN structure for nonvolatile memory devices
Creators - without role: J. Y. Lin
J. H. Chen
T. C. Chang
W. F. Wu - 國立清華大學原子科學院工程與系統科學系
Publication Details: Symposium on Nano Device Technology Symposium on Nano Device Technology
Identifiers: 9957770442606774
Academic Unit: Department of Engineering and System Science, College of Nuclear Science, National Tsing Hua University
Language: Traditional Chinese
Resource Type: Conference paper