Resistance switching behavior for nonvolatile memory applications of hafnium oxide films

Conference paper

K. H. Tsai, S. P. Yeh, W. F. Wu and C. Lien

Symposium on Nano Device Technology Symposium on Nano Device Technology

2010

Abstract

Resistance switching behavior;nonvolatile memory;hafnium oxide films

1 Record Views

Title: Resistance switching behavior for nonvolatile memory applications of hafnium oxide films
Creators - without role: K. H. Tsai
S. P. Yeh
W. F. Wu - 國立清華大學原子科學院工程與系統科學系
C. Lien
Publication Details: Symposium on Nano Device Technology Symposium on Nano Device Technology
Identifiers: 9957774743906774
Academic Unit: Department of Engineering and System Science, College of Nuclear Science, National Tsing Hua University
Language: Traditional Chinese
Resource Type: Conference paper