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Responsivity enhancement of CMOS-MEMS thermoelectric infrared sensor by heat transduction absorber design
Conference paper

Responsivity enhancement of CMOS-MEMS thermoelectric infrared sensor by heat transduction absorber design

Ting-Wei Shen, Ya-Chu Lee, Kai-Chieh Chang and Weileun Fang
Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS), Vol.2018-January, pp.29-32
04/2018

Abstract

CMOS-MEMS heat transduction absorber responsivity enhancement thermoelectric infrared sensor Electronic Optical and Magnetic Materials Condensed Matter Physics Mechanical Engineering Electrical and Electronic Engineering
This study presents a novel heat transduction absorber design to improve the responsivity of thermoelectric infrared sensor with serpentine thermocouple [1] using TSMC 0.18μm 1P6M standard CMOS process. Features of the proposed design (Fig.1a) are: (1) umbrella-like heat transduction structure providing a better heat-flow path, (2) absorber membrane with designed etching release holes to enhance absorption area/efficiency of infrared, and (3) serpentine thermocouple for large thermal resistance [1]. Thus, temperature difference between hot and cold junctions is increased, and the responsivity of IR sensor is significantly improved. Comparing with existing IR sensor [1] (Fig. 1b), the proposed design increases responsivity for 15-fold at 200mtorr.

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