Abstract
An equation for quantifying the CoSi 2 thermal stability of polysilicon lines ranging from 50 nm to 2 μm is proposed for the first time. In contrast to the intuitive thinking of narrower lines having a worse thermal stability, the equation predicts the weakest thermal stability occurring at the super nominal line in 90 nm technology. An interesting phenomenon of digitized resistance increase is also reported for the first time. ©2005 The Japan Society of Applied Physics.