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Roadmap for Ferroelectric Memory: Challenges and Opportunities for IMC Applications
Conference paper

Roadmap for Ferroelectric Memory: Challenges and Opportunities for IMC Applications

Sourav De, Maximilian Lederer, Yannick Raffel, Franz Muller, Konrad Seidel and Thomas Kampfe
Proceedings - International SoC Design Conference 2022, ISOCC 2022, pp.167-168
2022
DOI: https://doi.org/10.1109/ISOCC56007.2022.10031437

Abstract

Fe-finFET FeFET FeTFT Memory Array Neural Network Artificial Intelligence Computer Science Applications Hardware and Architecture Safety Risk Reliability and Quality
CMOS compatibility and the low process temperature of hafnium oxide (HfO2) make HfO_2 -based ferroelectric FETs an excellent candidate for logic, memory, and neuromorphic devices. This article discusses the challenges and opportunities of using hafnium oxide-basedferroelectric memory for in-memory-computing applications. Finally, we try to draw the roadmap for them.

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