Logo image
Back
Robust ESD self-protected LDNMOSFET by an enhanced displacement-current triggering
Conference paper

Robust ESD self-protected LDNMOSFET by an enhanced displacement-current triggering

Tzu-Cheng Kao, Chen-Hsin Lien, Chien-Wei Chiu, Jian-Hsing Lee, Yen-Hsiang Lo, Chung-Yu Hung, Tsung-Yi Huang and Hung-Der Su
IEEE International Reliability Physics Symposium Proceedings, Vol.2015-May, pp.EL51-EL55
26/05/2015
DOI: https://doi.org/10.1109/IRPS.2015.7112796
Appears in  keyword about Physics

Abstract

Electrostatic-discharge (ESD) Human Body Model (HBM) Machine Model (MM)
A new enhanced displacement-current triggering by adding floating P+ diffusions at each source finger edge for the HV LDNMOSFET is proposed. Unlike the conventional substrate-triggered ESD protection technologies, it is very easy to implement the scheme by the layout without any special circuit and additional component. With a total width of 1600 μm, the HBM/ MM ESD performance improvements from 1.5 kV/ 150 V to 5.5 kV/ 450 V are achieved. © 2015 IEEE.

Metrics

1 Record Views

Details

Logo image