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Room-temperature fabrication of highly transparent conductive aluminum-doped zinc oxide films
Conference paper

Room-temperature fabrication of highly transparent conductive aluminum-doped zinc oxide films

C.H. Chen, Y.C. Chen, S.F. Hong, C.L. Wang, W.C. Shih, C.P. Tsai, Y.C. Wu, C.H. Lai, C.N. Wei and H.Y. Bor
Conference Record of the IEEE Photovoltaic Specialists Conference, pp.2413-2417
2010

Abstract

Room temperature fabricated aluminum-doped zinc oxide (ZnO:Al) films were depOSited by radio-frequency magnetron sputtering under pure Ar ambient. By investigating and controlling the sputtering parameters, such as relative position between target and substrate, and working pressure, high quality ZnO: Al films were obtained. Even without substrate heating during deposition or post annealing process, we were able to fabricate ZnO:Al films on glass and polymer substrate with resistivity in the order of magnitude of 1 × 10 -4 ohm-cm and average transmittance over 90% in the visible light region. This indicates that such room temperature fabrication process could obtain high quality ZnO:Al films without thermal degradation and suitable for the application of flexible electronics on temperature sensitive polymer substrates. © 2010 IEEE.

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