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Room-temperature growth of epitaxial Fe3O4 films by ion beam deposition
Conference paper   Peer reviewed

Room-temperature growth of epitaxial Fe3O4 films by ion beam deposition

Chih-Huang Lai, Po-Hsiang Huang, Yu-Jen Wang and R.T. Huang
Journal of Applied Physics, Vol.95(11 II), pp.7222-7224
01/06/2004

Abstract

The magnetic, electrical and crystalline properties of epitaxial Fe 3 O 4 films grown by ion beam deposition was presented. The M s value of epitaxial films was found to be around 310 emu/cm 3 which was almost independent of thickness from 45 to 195 nm. The M s value of the polycrystalline films was also found to show significant thickness dependence, which could be attributed to the formation of the initial layer. Verwey transition at 110 K was also observed on 195 nm epitaxial films which decreased significantly with the decreasing thickness.

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