Abstract
Raman and SIMS studies of Mg-doped InN films with a Mg content from N Mg = 3.3 × 10 19 to 5.5 × 10 21 cm -3 are reported. Lattice dynamics of hexagonal InN with substitutional impurities and vacancies has been investigated theoretically and calculated Raman spectra were compared with experimental ones. It is concluded that Raman spectroscopy is a good tool for quantitative characterization of Mg-doped InN. © 2008 Wiley-VCH Verlag GmbH & Co. KGaA.