Abstract
The two-layer deep-UV portable conformable masking (PCM) system using a novolac resist as the imaging layer on a PMMA planarizing layer was chosen to delineate 1. 0 multiplied by 1. 25 mu m contact holes with a 0. 32 NA 405 nm 5 multiplied by projection lens to support 1 mu m MOS circuit fabrication. Measured SiO//2 images, delineated with CF//4 plus H//2 reactive ion etching, exhibited insignificant biases and small size variations for critical features down to 0. 87 multiplied by 0. 87 mu m over typical wafer topography when a near-UV dye was incorporated in the planarizing layer. A comparison of the dyed and undyed deep-UV PCM and a single-layer soaked process is also given.