Schottky barrier free NiSi/Si junction technology by Yb-implantation for 1xnm CMOS applications

Szu-Hung Chen; Min-Cheng Chen; Hung-Min Chen; Chuan-Feng Shih; Shih-Hsiung Wu; Yi-Ying Ho; Yu-Sheng Lai; Shou-Ji Chen; Kent Liu; Bo-Yuan Chen; Dong-Yen Lai; Chang-Hsien Lin; Chia-Yi Lin; Fu-Kuo Hsueh; Chi-Ming Wu; Cho-Lun Hsu; Wen-Cheng Chiu; Chun-Chi Chen; Andy Liu; Ching-Tai Hsu; Cheng-San Wu; Mei-Yi Lee; Tong-Huan Chou; Jie-Yi Yao; Yi-Ling Shen; Qiong-Zi Hsu; Kun-Lin Lin; Chien-Ting Wu; Mei-Ling Kuo; Chi-Hui Yang; Wen-Fa Wu; Chiahua Ho; Chenming Hu; Fu-Liang Yang

doi:10.1109/VLSI-TSA.2013.6545608

Conference paper

Schottky barrier free NiSi/Si junction technology by Yb-implantation for 1xnm CMOS applications

Szu-Hung Chen, Min-Cheng Chen, Hung-Min Chen, Chuan-Feng Shih, Shih-Hsiung Wu, Yi-Ying Ho, Yu-Sheng Lai, Shou-Ji Chen, Kent Liu, Bo-Yuan Chen, …

2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013, 6545608

2013

DOI: https://doi.org/10.1109/VLSI-TSA.2013.6545608

Abstract

Electrical and Electronic Engineering

This is the first report of 0 eV or negative Schottky barrier height for electrons down to 100 K, even on lightly doped Si. It is achieved by energy barrier engineering with Yb doping at NiSi/Si interface. Ideal unity rectification ratio and reasonable sheet resistance are also achieved in this study. This technology can potentially boost future MOSFET performance. © 2013 IEEE.

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Title: Schottky barrier free NiSi/Si junction technology by Yb-implantation for 1xnm CMOS applications
Translated title: Schottky barrier free NiSi/Si junction technology by Yb-implantation for 1xnm CMOS applications
Creators - without role: Szu-Hung Chen - National Institutes of Applied Research
Min-Cheng Chen - Nano Hydrophobics (United States)
Hung-Min Chen - National Institutes of Applied Research
Chuan-Feng Shih - National Chen Kung University
Shih-Hsiung Wu - National Chen Kung University
Yi-Ying Ho - National Cheng Kung University
Yu-Sheng Lai - National Institutes of Applied Research
Shou-Ji Chen - National Institutes of Applied Research
Kent Liu - National Institutes of Applied Research
Bo-Yuan Chen - Nano Hydrophobics (United States)
Dong-Yen Lai - National Institutes of Applied Research
Chang-Hsien Lin - National Institutes of Applied Research
Chia-Yi Lin - National Institutes of Applied Research
Fu-Kuo Hsueh - National Institutes of Applied Research
Chi-Ming Wu - National Institutes of Applied Research
Cho-Lun Hsu - National Institutes of Applied Research
Wen-Cheng Chiu - Nano Hydrophobics (United States)
Chun-Chi Chen - Nano Hydrophobics (United States)
Andy Liu - National Institutes of Applied Research
Ching-Tai Hsu - National Institutes of Applied Research
Cheng-San Wu - National Institutes of Applied Research
Mei-Yi Lee - National Institutes of Applied Research
Tong-Huan Chou - National Institutes of Applied Research
Jie-Yi Yao - National Institutes of Applied Research
Yi-Ling Shen - National Institutes of Applied Research
Qiong-Zi Hsu - National Institutes of Applied Research
Kun-Lin Lin - Nano Hydrophobics (United States)
Chien-Ting Wu - National Institutes of Applied Research
Mei-Ling Kuo - National Institutes of Applied Research
Chi-Hui Yang - National Institutes of Applied Research
Wen-Fa Wu - National Institutes of Applied Research
Chiahua Ho - National Institutes of Applied Research
Chenming Hu - University of California, Berkeley
Fu-Liang Yang - National Institutes of Applied Research
Publication Details: 2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013, 6545608
Identifiers: 9781467330817; 9957776555606774
Academic Unit: Department of Engineering and System Science, College of Nuclear Science, National Tsing Hua University
Language: English
Resource Type: Conference paper

Schottky barrier free NiSi/Si junction technology by Yb-implantation for 1xnm CMOS applications

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