Abstract
The seeding effects of the pre-crystallized (RTP 750°C 30s) thin buffer layer, SrBi 2 Ta 2x O 9 (SBT, x=0.9, 1.0, and 1.1), regarding the structure, the morphology and the ferroelectric properties of the SrBi 2 Ta 2 O 9 ferroelectric thin films on top of buffer layer, have been investigated. X-ray diffraction patterns revealed that the crystallinity of SrBi 2 Ta 2 O 9 thin films were significant influenced by the buffer layers with various Ta contents. By adding a Ta deficient buffer layer, the preferred polar a-axis orientation and the uniformity of grain size within the SBT thin films were promoted. Meanwhile, the optimized ferroelectric properties were achieved from the SrBi 2 Ta 1 8 O 9 buffered SrBi 2 Ta 2 O 9 thin film, with maximum 2Pr values about 19.7 μ C/cm 2 , which was almost 93% greater than that of specimen with the stoichiometric buffered one.