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Selective area growth of high-density GaN nanowire arrays on Si(111)
Conference paper

Selective area growth of high-density GaN nanowire arrays on Si(111)

C.H. Wu, P.Y. Lee, K.Y. Chen and K.Y. Cheng
2016 IEEE Photonics Society Summer Topical Meeting Series, SUM 2016, pp.169-170
08/2016
DOI: https://doi.org/10.1109/PHOSST.2016.7548763
Appears in  keyword about Physics

Abstract

GaN nanoimprint lithography nanowires photoluminescence plasma-assisted molecular beam epitaxy Computer Networks and Communications Signal Processing Atomic and Molecular Physics and Optics Electrical and Electronic Engineering
Selective-area growth of high-density GaN nanowires on Si(111) substrate by plasma-assisted molecular beam epitaxy is studied. AlN nanopedestals used as nanowires growth seeds are fabricated by nanoimprint lithography. GaN nanowires with hexagonal cross-section show the best optical quality with a strong resonant emission at 3.457eV.

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