Selective dry etching of GaP over Al0.4Ga0.6P using SiCl4 and SiF4

Conference paper

Selective dry etching of GaP over Al0.4Ga0.6P using SiCl4 and SiF4

J.H. Epple, T. Chung, C. Sanchez, K. Y. Cheng and K.C. Hsieh

2002 Electronic Materials Conference

2002

Abstract

AlxGa1-xAs;lateral oxidation

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Title: Selective dry etching of GaP over Al0.4Ga0.6P using SiCl4 and SiF4
Creators - without role: J.H. Epple
T. Chung
C. Sanchez
K. Y. Cheng
K.C. Hsieh
Identifiers: 9957775896606774
Academic Unit: National Tsing Hua University
Language: Traditional Chinese
Resource Type: Conference paper
Publication Details: 2002 Electronic Materials Conference