Self-aligned microbonded Ge/Si PIN waveguide photodetectors

Chih-Kuo Tseng; Jhong-Da Tian; Wei-Cheng Hung; Kai-Ning Ku; Chih-Wei Tseng; Yung-Sheng Liu; Neil Na; Ming-Chang M. Lee

doi:10.1109/GROUP4.2012.6324188

Conference paper

Self-aligned microbonded Ge/Si PIN waveguide photodetectors

Chih-Kuo Tseng, Jhong-Da Tian, Wei-Cheng Hung, Kai-Ning Ku, Chih-Wei Tseng, Yung-Sheng Liu, Neil Na and Ming-Chang M. Lee

IEEE International Conference on Group IV Photonics GFP, 6324188

2012

DOI: https://doi.org/10.1109/GROUP4.2012.6324188

Abstract

A cost-effective process using self-aligned microbonded Ge-beams on silicon waveguides is presented. Heterojunction photodetectors featuring low dark-current of 0.7uA (-2V) and high turn-on current of 10.8 mA (+3V) are demonstrated. The operation bandwidth is 11-16GHz. © 2012 IEEE.

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Title: Self-aligned microbonded Ge/Si PIN waveguide photodetectors
Creators - without role: Chih-Kuo Tseng - National Tsing Hua University
Jhong-Da Tian - National Tsing Hua University
Wei-Cheng Hung - National Tsing Hua University
Kai-Ning Ku - National Tsing Hua University
Chih-Wei Tseng - National Tsing Hua University
Yung-Sheng Liu - National Tsing Hua University
Neil Na - National Tsing Hua University
Ming-Chang M. Lee - National Tsing Hua University
Publication Details: IEEE International Conference on Group IV Photonics GFP, 6324188
Grant note: KOTURA, Inc.;Rockley Group;Shanghai Simgui Techono
Identifiers: 9781457708268; 9957766795006774
Academic Unit: Institute of Photonics Technologies, College of Electrical Engineering and Computer Science, National Tsing Hua University
Language: English
Resource Type: Conference paper

Self-aligned microbonded Ge/Si PIN waveguide photodetectors

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