Self-aligned microbonding technique for making butt-coupled germanium metal-semiconductor-metal waveguide photodetectors

Wei-Ting Chen; Chih-Kuo Tseng; Ku-Hung Chen; Neil Na; Ming-Chang M. Lee

doi:10.1109/OMN.2013.6659054

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Conference paper

Self-aligned microbonding technique for making butt-coupled germanium metal-semiconductor-metal waveguide photodetectors

Wei-Ting Chen, Chih-Kuo Tseng, Ku-Hung Chen, Neil Na and Ming-Chang M. Lee

International Conference on Optical MEMS and Nanophotonics, pp.51-52

2013

DOI: https://doi.org/10.1109/OMN.2013.6659054

Abstract

A novel process using self-aligned microbonding technique for Ge butt-coupled to silicon waveguides is presented. The photodetector features a low dark current of 0.29 μA and a high responsivity of 1.01 A/W at 1310 nm at -1 V bias. © 2013 IEEE.

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Title: Self-aligned microbonding technique for making butt-coupled germanium metal-semiconductor-metal waveguide photodetectors
Creators - without role: Wei-Ting Chen - Institute of Photonics Technologies , National Tsing Hua University
Chih-Kuo Tseng - National Tsing Hua University
Ku-Hung Chen - National Tsing Hua University
Neil Na - National Tsing Hua University
Ming-Chang M. Lee - National Tsing Hua University
Publication Details: International Conference on Optical MEMS and Nanophotonics, pp.51-52
Grant note: The Institute of Electrical Engineers of;Japan, Se
Identifiers: 9781479915125; 9957768615406774
Academic Unit: Institute of Photonics Technologies, College of Electrical Engineering and Computer Science, National Tsing Hua University
Language: English
Resource Type: Conference paper

Self-aligned microbonding technique for making butt-coupled germanium metal-semiconductor-metal waveguide photodetectors

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