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Shape transition in the initial growth of titanium suicide clusters on Si(111)
Conference paper   Peer reviewed

Shape transition in the initial growth of titanium suicide clusters on Si(111)

H.F. Hsu, T.F. Chiang, H.C. Hsu and L.J. Chen
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol.43(7 B), pp.4541-4544
07/2004

Abstract

Shape transition STM Strain relief TEM Titanium sillicide
The growth of titanium suicide clusters has been observed for sub-monolayer Ti deposited on Si(111)-7 × 7. Irregular shape tetragonal Ti 5 Si 4 islands were observed to grow at 600°C. On the other hand, the elongated orthorhombic-Ti 5 Si 4 (O-Ti 5 Si 4 ) clusters form at 700°C. The clusters underwent a rapid increase in length and slight reduction in width as the cluster area exceeds a critical size (∼15 nm 2 ). The elongated clusters are oriented along three equivalent Si(2-20) directions of the Si(111) surface with O-Ti 5 Si 4 (025)//Si(2-20). The shape change is in agreement with theoretical prediction based on the strain relief mechanism.

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