Abstract
SiC lateral MOSFETs with multi-layered epi-channels were studied in this work. The epi-channel consisting of a high concentration n-type epilayer sandwiched between two lightly doped p-type layers showed a maximum field effect mobility of 17 cm 2 /V.s, as compared to 1.53 cm 2 /V.s for inversion type devices without epi-channels. These devices are normally-off with an average threshold voltage of 1.34V. © (2014) Trans Tech Publications, Switzerland.