Silicon-nitride films deposited by PECVD method on silicon substrate for next generation laser interference gravitational wave detector

Huang-Wei Pan; Ling-Chi Kuo; Shu-Yu Huang; Meng-Yun Wu; Yu-Hang Juang; Chia-Wei Lee; Shiuh Chao

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Silicon-nitride films deposited by PECVD method on silicon substrate for next generation laser interference gravitational wave detector

Huang-Wei Pan, Ling-Chi Kuo, Shu-Yu Huang, Meng-Yun Wu, Yu-Hang Juang, Chia-Wei Lee and Shiuh Chao

Optics InfoBase Conference Papers, Vol.Part F31-OIC 2016

07/2014

Abstract

Electronic

Optical and Magnetic Materials

Mechanics of Materials

We show optical properties and stress related mechanical loss for silicon nitride films deposited by plasma enhanced chemical vapor deposition (PECVD) method for application in the next generation laser interference gravitational wave detector.

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Title: Silicon-nitride films deposited by PECVD method on silicon substrate for next generation laser interference gravitational wave detector
Creators - without role: Huang-Wei Pan - Institute of Photonics Technologies , National Tsing Hua University
Ling-Chi Kuo - Institute of Photonics Technologies , National Tsing Hua University
Shu-Yu Huang - Institute of Photonics Technologies , National Tsing Hua University
Meng-Yun Wu - Institute of Photonics Technologies , National Tsing Hua University
Yu-Hang Juang - Institute of Photonics Technologies , National Tsing Hua University
Chia-Wei Lee - Institute of Photonics Technologies , National Tsing Hua University
Shiuh Chao - Institute of Photonics Technologies , National Tsing Hua University
Publication Details: Optics InfoBase Conference Papers, Vol.Part F31-OIC 2016
Identifiers: 9781943580132; 9957771639206774
Academic Unit: National Tsing Hua University
Language: English
Resource Type: Conference paper

Silicon-nitride films deposited by PECVD method on silicon substrate for next generation laser interference gravitational wave detector

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