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Simulation Study of 4H-SiC Trench MOSFETs with Various Gate Structures
Conference paper

Simulation Study of 4H-SiC Trench MOSFETs with Various Gate Structures

Jheng-Yi Jiang, Chih-Fang Huang, Tian-Li Wu and Feng Zhao
2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019, pp.401-403
03/2019
DOI: https://doi.org/10.1109/EDTM.2019.8731332

Abstract

Ciss Coss Crss Qg SiC UMOSFETs split-gate Electrical and Electronic Engineering Electronic Optical and Magnetic Materials Instrumentation Hardware and Architecture
In this paper, we systematically study the effect of gate structures of a 4H-SiC UMOSFET on its performance, focusing on the fast switching performance. Based on the simulation results, DC and AC characteristics of different gate structures are compared. It is found that a structure of UMOSFET, combining a grounded split-gate (SG), a trench bottom protection P+ shielding layer (PS) and a current spreading layer (CSL), yields the best compromise.

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