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Single-Electron Driven Chip Size Near Infrared Free Electron Laser
Conference paper

Single-Electron Driven Chip Size Near Infrared Free Electron Laser

Pabir Garu, Wei-Chih Wang and Karthickraj Muthuramalingam
Proceedings of SPIE - The International Society for Optical Engineering, Vol.12948, 129480G
2024

Abstract

fishnet grating Nano chip size free-electron laser single electron excitation Electronic Optical and Magnetic Materials Condensed Matter Physics Computer Science Applications Applied Mathematics Electrical and Electronic Engineering
This study proposed a high intensity and single-mode cross-fishnet grating based single-electron near infrared (NIR) free -electron laser (FEL). We have numerically investigated the achievable laser emission from a single electron and atop a nano-grating silicon waveguide in order to envision a chip-size free-electron laser as a potent research tool, for the first time. A single 45-keV electron generates 1.14 μm laser-like radiation at the Bragg resonance of a 31 μm long silicon grating with a 250-nm thickness and 1.23- μm period. The FEL is capable of producing a high intensity Electric field of 7.45× 10 -10 V/m, and magnetic field of 6.0× 10 -12 A/m. Besides, the FEL can generate a single-mode emission of radiation at 0.2629 PHz. This research suggests that electrons might interact with the structure more effectively by utilizing methods from both electron beam physics and nanophotonic design to create high-brightness photon sources for potential applications in the NIR wavelengths. It would also be fascinating to look deeper into the possibility of single-photon sources for quantum optics in nano-grating generated by a single keV electron.

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