Abstract
The phase shifting mask technology has quickly progressed from the exploratory phase to a serious development phase. This requires high resolution measurement techniques to quantify experimental results to optimize the designs. This paper describes a set of electrical linewidth measurement test sites which covers all five representative lithographic features in combination of dark-field and light-field patterns, positive and negative resists. The test sites can investigate binary intensity mask, attenuated, alternating, subresolution- assisted, rim, unattenuated, edge, and covered edge phase shifting masks. All test sites can be used with a single-level wafer exposure. There is no need to remove extra shorts or opens induced by uncovered phase shifters.