Abstract
Nano-pore arrays on GaAs by templated anodization of GaAs through a nano-channel alumina (NCA) membrane are reported for the first time. The NCA is formed by anodization of single-crystal aluminum grown epitaxially on a GaAs substrate. The anodization is continued into the GaAs underneath the NCA, which is anodized only at the pore bottoms of the NCA. After removal of the NCA, the nanostructured GaAs obtained is studied using scanning electron microscopy. The obtained nano-pores are 30-50 nm deep and spaced ∼100 nm apart. Site-controlled InAs self-assembled quantum dots are demonstrated by regrowth on this nanostructured GaAs. © 2005 American Vacuum Society.